| PART |
Description |
Maker |
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| APT43F60B2 APT43F60L |
N-Channel FREDFET
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation
Microsemi, Corp.
|
| JANSR2N7401 FN4571 |
6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| BLM31B601SPT |
600 OHM@100MHZ 1206.2A FERRITE
|
MURATA MANUFACTURING CO LTD
|
| APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
|
| PHX4N60 |
3.6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| FQB12N60CTM |
12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BSP125L6327 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| BSP125E6433 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS A G
|
| 2SK1118 |
6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS
|
|
| STD6NM60N-1 |
4.6 A, 600 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
STMICROELECTRONICS
|
|
